University of Heidelberg -- Oct. 8 - 12, 2001
I. Introduction (3.6MB) | |||
1. | Why? | 2 | |
2. | Examples | ||
Astronomical Imaging | 7 | ||
Medical Imaging - Positron Emission Tomography | 15 | ||
X-Ray Fluorescence | 22 | ||
Vertex Detection in High-Energy Physics | 28 | ||
Failure Analysis in Si Integrated Circuits | 33 | ||
Detection of Gravity Waves | 35 | ||
3. | The Problem | 37 | |
4. | Example Measuring System | 45 | |
II. Signal Formation and Detection Thresholds (1.4MB) | |||
1. | Detector Models | 2 | |
Direct and Indirect Detection | 3 | ||
Detector Functions | 5 | ||
Example Detector Models | 6 | ||
2. | The Signal | 13 | |
Elementary Excitations | |||
Band structure in crystals | 14 | ||
Detector Sensitivity | 20 | ||
Signal fluctuations - the Fano factor | 25 | ||
3. | Signal Formation | 30 | |
Example: semiconductor detectors | 31 | ||
Formation of a High-Field Region | 34 | ||
Charge Collection | 51 | ||
Time Dependence of the Signal Current | 58 | ||
Induced charge - Ramo’s theorem | 60 | ||
4. | Signal Acquisition | 77 | |
Amplifier Types | 77 | ||
Active Integrator - Charge-Sensitive Amplifiers | 81 | ||
...Calibration | 83 | ||
Realistic Charge-Sensitive Amplifiers | 84 | ||
Input Impedance of a Charge-Sensitive Amplifier | 88 | ||
Time Response of a Charge-Sensitive Amplifier | 89 | ||
A1 | Appendix: Equivalent Circuits | 91 | |
III. Electronic Noise (184kB) | |||
1. | Why? | 2 | |
2. | What Determines Resolution? | 4 | |
3. | Basic Noise Mechanisms | 7 | |
Thermal Noise in Resistors | 8 | ||
Shot Noise | 9 | ||
Derivation of thermal noise spectral density | 10 | ||
Derivation of shot noise spectral density | 12 | ||
"Noiseless" Resistances | 13 | ||
Noise Characteristics | 15 | ||
4. | Noise in Amplifiers | 17 | |
Amplifier Noise Model | 18 | ||
Noise Bandwidth vs. Signal Bandwidth | 22 | ||
Amplifier Noise Matching | 23 | ||
Noise Measures (noise resistance, temperature and energy) | 26 | ||
S/N with Capacitive Signal Sources | 30 | ||
Charge-Sensitive Preamplifier Noise vs. Detector Capacitance | 34 | ||
Quantum noise limits in amplifiers | 37 | ||
IV. Signal Processing (1.8MB) | |||
1. | Continuous Signals | 3 | |
2. | Pulsed Signals | 7 | |
Simple Example: CR-RC Shaping | 9 | ||
Pulse Shaping and Signal-to-Noise Ratio | 10 | ||
Ballistic Deficit | 16 | ||
3. | Evaluation of Equivalent Noise Charge | 17 | |
Analytical Analysis of a Detector Front-End | 19 | ||
Equivalent Model for Noise Analysis | 20 | ||
Determination of Equivalent Noise Charge | 26 | ||
CR-RC Shapers with Multiple Integrators | 30 | ||
Examples | 32 | ||
4. | Noise Analysis in the Time Domain | 42 | |
Quantitative Analysis of Noise in the Time Domain | 51 | ||
Correlated Double Sampling | 52 | ||
5. | Detector Noise Summary | 62 | |
6. | Rate of Noise Pulses in Threshold Discriminator Systems | 67 | |
7. | Some Other Aspects of Pulse Shaping | ||
Baseline Restoration | 74 | ||
Pole-Zero Cancellation | 76 | ||
Bipolar vs. Unipolar Shaping | 77 | ||
Pulse Pile-Up and Pile-Up Rejection | 78 | ||
Delay Line Clipping | 82 | ||
8. | Timing Measurements | 84 | |
9. | Digitization of Pulse Height and Time - Analog-to-Digital Conversion | 102 | |
A/D Parameters | 103 | ||
A/D Techniques | 113 | ||
Time Digitizers | 118 | ||
9. | Digital Signal Processing | 122 | |
V. Amplifying Devices and Microelectronics (1.8MB) | |||
1. | Bipolar Transistors | 2 | |
Bipolar transistors in amplifiers | 7 | ||
2. | Field Effect Transistors | 16 | |
Junction Field Effect Transistors (JFETs) | 16 | ||
Metal Oxide Semiconductor FETs (MOSFETs) | 24 | ||
MOSFETs in amplifiers | 34 | ||
3. | Noise in Transistors | 38 | |
Noise in Field Effect Transistors | 38 | ||
...Optimization of Device Geometry | 42 | ||
Noise in Bipolar Transistors | 48 | ||
Noise Optimization - Capacitive Matching | 56 | ||
Optimization for Low Power | 61 | ||
4. | SQUIDs | 68 | |
SQUID Noise | 71 | ||
5. | Microelectronics | 74 | |
Fabrication of Semiconductor Devices | 74 | ||
Integrated Circuits | 85 | ||
LBNL Microsystems Laboratory | 89 | ||
VI. Detector Systems - Conflicts and Compromises (1.6MB) | |||
1. | Conflicts | 2 | |
2. | CDF Vertex Detector Upgrade | 3 | |
3. | BaBar Silicon Vertex Tracker | 9 | |
3. | Development of a Tracker Concept at the LHC | 17 | |
Environment and Requirements | 17 | ||
Layout | 24 | ||
Strip Readout Architecture | 29 | ||
...Required signal-to-noise ratio | 30 | ||
...Prototype results | 34 | ||
Two-Dimensional Detectors | 38 | ||
ATLAS Pixel System | 40 | ||
Advantages of pixels at LHC | 46 | ||
VII. Why Things Don’t Work or Why S/N Theory Often Seems to be Irrelevant (297kB) | |||
1. | Common Types of Interference | 3 | |
2. | Shielding Techniques | 7 | |
Contiguous Shielding | 7 | ||
Field Line Pinning | 10 | ||
Self-Shielding Structures | 11 | ||
3. | Shared Current Paths | 12 | |
4. | Remedial Techniques | 15 | |
Breaking Parasitic Signal Paths | 16 | ||
Direct Current from Sensitive Nodes | 21 | ||
"Ground" Connections in Multi-Stage Circuits | 26 | ||
The Folded Cascode | 27 | ||
5. | System Considerations | 31 | |
Choice of Shaper | 31 | ||
Connections in Multi-Channel Systems | 32 | ||
"Self-Shielding" Cables | 37 | ||
6. | Closing Remarks | 38 | |
VIII. Detectors and Cosmology (7.9MB) | |||
1. | Introduction | 2 | |
2. | CMB Experiments | 3 | |
3. | Examples of Existing CMB Arrays | ||
MAXIMA | 5 | ||
SuZIE | 8 | ||
4. | Cryogenic Detector Arrays | 12 | |
Detector Sensitivity | 13 | ||
Thermal Detectors | 16 | ||
Noise Optimization | 19 | ||
Heat Capacity | 21 | ||
Signal Fluctuations | 22 | ||
Voltage-Biased Transition Edge Sensors | 25 | ||
Monolithic Fabrication of TES Arrays | 31 | ||
Readout | 36 | ||
...Signal Summing Schemes | 38 | ||
...Cross Talk | 40 | ||
...Demodulation | 42 | ||
...Some Challenges | 44 | ||
5. | Summary | 48 | |
6. | Outlook | 49 |