Title: Ultra-Fast Silicon Detector


In this seminar I will review the progresss towards the development of a new type of silicon detectors suited for picosecond tracking, the so called Ultra-Fast Silicon Detectors. UFSDs are based on the concept of Low-Gain Avalanche Detectors, which are silicon detectors with an internal multiplication mechanism so that they exhibit a signal which is a factor of ~ 10 larger than standard silicon detectors. This increased signal makes LGADs ideal for many applications, ranging from experiments requiring very low material budgets, to very high radiation environment, to applications that need very precise timing. I will report on first measurements and the plan for future productions.